METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device using an SiC substrate, which improves throughput of a dicing process and prolongs the life of a dicing blade.

SOLUTION: The method includes a process for forming a Schottky electrode 5 and a surface opening dicing line region 7 on a surface of an SiC wafer (high concentration n-type substrate 1 and low concentration n-type epitaxial layer 2) and forming an ohmic electrode 4 and a rear opening dicing line region 8 on a rear face of the SiC wafer before a dicing process. The surface opening dicing line region 7 and the rear opening dicing line region 8 includes prescribed dicing lines. The SiC wafer is divided along the prescribed dicing lines to obtain a plurality of semiconductor chips by the dicing process using the blade.

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