发明名称 |
METHOD FOR CONTROLLED FORMATION OF THE RESISTIVE SWITCHING MATERIAL IN A RESISTIVE SWITCHING DEVICE AND DEVICE OBTAINED THEREOF |
摘要 |
The present disclosure provides a method for controlled formation of the resistive switching layer in a resistive switching device. The method comprises providing a substrate (2) comprising the bottom electrode (10), providing on the substrate a dielectric layer (4) comprising a recess (7) containing the metal for forming the resistive layer (11), providing on the substrate a dielectric layer (5) comprising an opening (8) exposing the metal of the recess, and forming the resistive layer in the recess and in the opening.
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申请公布号 |
US2010127233(A1) |
申请公布日期 |
2010.05.27 |
申请号 |
US20070439414 |
申请日期 |
2007.08.31 |
申请人 |
NXP, B.V.;INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) |
发明人 |
GOUX LUDOVIC;WOUTERS DIRK |
分类号 |
H01L45/00;H01L21/16;H01L29/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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