SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE USING SEMICONDUCTOR DEVICE

摘要

In a semiconductor device having a thin film transistor and a thin film diode on a single substrate, the characteristic required for each of them can be realized. The semiconductor device includes: a first crystalline semiconductor layer (107) supported by a substrate (101) and having a channel region (115), a source region, and a drain region (113); a gate insulation film (108) arranged to cover the first crystalline semiconductor layer (107); a thin film transistor arranged on the gate insulation film (108) and having a gate electrode (109) for controlling conductivity of the channel region (115); and a thin film diode supported by the substrate (101) and having a second crystalline semiconductor layer (110) containing at least an n-type region (114) and a p-type region (118).  The second crystalline semiconductor layer (110) is formed on the gate insulation film (108) so as to be in contact with the surface of the gate insulation film (108).  The n-type region (114) or the p-type region (118) and the source region and the drain region (113) contain the same impurity element.