| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can be adapted to a high frequency, can improve a heat dissipation property, and furthermore can reduce cost while improving an yield as compared with the case that a semi finished product such as a semiconductor chip having no seal film is delt. <P>SOLUTION: The method of manufacturing the semiconductor device includes: a first semiconductor constitution preparation process which prepares a first semiconductor constitution 1a having a first external connection electrode; a second semiconductor constitution preparation process which prepares a second semiconductor constitution 1b having a second seal film provided so as to cover a second external connection electrode and the second external connection electrode; a fixing process which fixes the second semiconductor constitution at a central portion of the first semiconductor constitution via an adhesive layer 12; and an insulating film forming process which forms an insulating film on an upper face of the first semiconductor constitution and on an upper face of the second semiconductor constitution. <P>COPYRIGHT: (C)2010,JPO&INPIT |
