| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technology to form a high-quality SiO<SB>2</SB>film while keeping a substrate temperature at 500°C or lower to solve the problem that an SiO<SB>2</SB>film formed at a low temperature cannot be used as it is since the SiO<SB>2</SB>film formed at a low temperature has slightly inferior characteristics than those of an SiO<SB>2</SB>film formed at a high temperature, and in order to obtain the same characteristics as those of the SiO<SB>2</SB>film formed at a high temperature, annealing at 500°C or higher is required in post treatment, but reduction in process temperature is required. Ž<P>SOLUTION: After an SiO<SB>2</SB>film is formed at a low temperature of 500°C or lower using active oxygen atoms, ultraviolet light is irradiated once or several times on the silicon oxide film-formed side surface of a silicon substrate to improve the characteristics of the SiO<SB>2</SB>film without increasing the temperature of the Si substrate. The ultraviolet light meets the following conditions: a wavelength of 200 nm or longer and 370 nm or shorter is included, a one-time irradiation time is 0.1 microseconds or sorter, and the energy density is not lower than 0.01J/cm<SP>2</SP>per irradiation. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
