发明名称 |
Antifuse circuit of inverter type and method of programming the same |
摘要 |
Example embodiments are directed to an antifuse circuit of an inverter type and a method of programming the same. The antifuse circuit has improved corrosion resistance, utilizes lesser chip area and can be programmed at a low voltage. The antifuse circuit includes a PMOS transistor with the gate coupled to a drive power voltage terminal and the source coupled to an anti-pad terminal. During programming the PMOS transistor is off and the source receives an alternating current. Programming the antifuse circuit involves trapping a plurality of electron in an STI region as a result of gate-induced drain leakage. The antifuse circuit also includes an NMOS transistor with the drain connected to the drain of the PMOS transistor, the source connected to ground and the gate connected to a program control signal. The antifuse circuit results in reliable fuse programming at a low voltage by using the PMOS transistor as an anti-fuse device.
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申请公布号 |
US2010127731(A1) |
申请公布日期 |
2010.05.27 |
申请号 |
US20090585276 |
申请日期 |
2009.09.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEO JAE-YONG;KANG GU-GWAN;KANG TAE-HUN;PARK HONG-SIK;KIM JUNG-HYEON |
分类号 |
H03K19/173;H01H37/76 |
主分类号 |
H03K19/173 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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