| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an aqueous dispersing element for chemical mechanical polishing capable of performing polishing without any copper remainder (copper residue) and corrosion while striking a balance between high polishing speed and highly flat characteristics without causing any defects in a copper film and an insulation film, to provide a method of preparing the dispersing element, and to provide a method of performing chemical mechanical polishing of a semiconductor device. <P>SOLUTION: The aqueous dispersing element for chemical mechanical polishing includes an amino acid (A), a triazole dielectric (B), an imidazole dielectric (C), an oxidant (D), and an abrasive grain (E), where the ratio (W<SB>B</SB>/W<SB>C</SB>) of the content (W<SB>B</SB>) [mass%] of the constituent of (B) to the content (W<SB>C</SB>) [mass%] of the constituent of (C) ranges from 0.5 to 30. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
