| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device high in reliability and improved in characteristics. SOLUTION: The semiconductor device 1 includes a layout region having regularity in one chip, and a layout region without having regularity, and includes lower conductive layers 11, an interlayer dielectric formed on the lower conductive layers 11, upper wiring layers M1 formed thereon, and two connection plugs 10 arranged to electrically connect the lower conductive layers 11 to the upper wiring layers M1 at the substantially shortest distances. In at least a partial region of the layout region having regularity, the electrical connection between the lower conductive layer 11 and the upper wiring layer M1 is carried out by at least two connection plugs 10 arranged at an immediately-upper position extending from a point directly above the lower conductive layer 11 and at a shifted position away from the immediately-upper position, and an intermediate connection layer 20 for electrically connecting them. COPYRIGHT: (C)2010,JPO&INPIT |
