| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor device capable of making a light emission wavelength longer without lowering light emission efficiency. <P>SOLUTION: The nitride semiconductor device has a GaN layer 103 having a (0001) plane and a plane other than the (0001) plane, and an InGaN layer 104 coming into contact with the GaN layer 103 and containing indium, the InGaN layer 104 being characterized in that a part coming into contact with the plane other than the (0001) plane has a larger composition ratio of indium than a part coming into contact with the (0001) plane. <P>COPYRIGHT: (C)2010,JPO&INPIT |
