| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device reduced in an influence of the displacement of a contact on characteristics of a circuit. SOLUTION: The semiconductor device includes: an element separating film 20 provided in a semiconductor layer 10; an element forming region zoned by the element separating film 20; gate wiring 140 extending over the element forming region and the element separating film 20; a sidewall 150 formed on the sidewall of the gate wiring 140; and a contact 200 connected with the gate wiring 140 positioned on the element separating film 20. The sidewall of the gate wiring 140 has a region 144 contacting with the contact 200 at least at an upper part of the region. COPYRIGHT: (C)2010,JPO&INPIT |
