| 发明名称 |
CIRCUIT WITH IMPROVED EFFICIENCY AND CREST FACTOR FOR CURRENT FED BIPOLAR JUNCTION TRANSISTOR (BJT) BASED ELECTRONIC BALLAST. |
| 摘要 |
<p>A current fed bipolar junction transistor (BJT) based inverter ballast includes base drive circuits configured to drive respective BJT switches, and high-speed drive reverse peak current limiting circuits, configured to operate in conjunction with the respective base drive circuits.</p> |
| 申请公布号 |
MX2010004843(A) |
申请公布日期 |
2010.05.27 |
| 申请号 |
MX20100004843 |
申请日期 |
2008.09.11 |
| 申请人 |
GENERAL ELECTRIC COMPANY. |
发明人 |
TIMOTHY CHEN;JAMES K. SKULLY;NITIN KUMAR |
| 分类号 |
H05B41/282 |
主分类号 |
H05B41/282 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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