| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an exposure method based on a mask pattern correction method for minimizing the presence of optically isolated patterns and transferring a mask pattern having a desired line width and the like to a photoresist. <P>SOLUTION: In the exposure method, a mask pattern formed in a mask for exposure is transferred to a photoresist formed on a substrate by using an exposure mask produced based on correction of design pattern data of a plurality of design patterns. For the correction of the design pattern data, the exposure method includes a process for extracting an isolated pattern, which is a pattern having an optically isolated part, from the mask pattern, and, in an adjacent pattern extending in parallel to the isolated part of the isolated pattern and having a terminal end part, arranging an extension part extending from the terminal end part in the extending direction of the isolated part of the isolated pattern adjacently to the isolated part of the isolated pattern. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
