发明名称 |
Resistance-variable memory device, method for fabricating the same and memory system including the same |
摘要 |
In the method of fabricating the variable-resistance memory device, a substrate including a conductive region is provided, and a preliminary lower electrode is formed on the conductive region. A lower electrode is formed by oxidizing an upper portion of the preliminary lower electrode. A phase-change material layer is formed on the lower electrode.
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申请公布号 |
US2010129947(A1) |
申请公布日期 |
2010.05.27 |
申请号 |
US20090591393 |
申请日期 |
2009.11.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE HYUN-SUK;LIM TAI-SOO;LIM HYUNSEOK;PARK INSUN;CHOI JAEHYOUNG |
分类号 |
H01L45/00;H01L21/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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