发明名称
摘要 <p>Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.</p>
申请公布号 JP2010518626(A) 申请公布日期 2010.05.27
申请号 JP20090549143 申请日期 2008.02.12
申请人 发明人
分类号 H01S5/343 主分类号 H01S5/343
代理机构 代理人
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