| 摘要 |
The method involves depositing a stop layer (16) onto a substrate (14) adjacent and contiguous with transferred silicon blocks (10, 12), where the stop layer is made of a material of greater resistance or hardness than the material constituting the transferred block and of thickness smaller than the thickness (E) of the transferred block. Thinning of the transferred block is actuated, and thinning time is pre-programmed as a function of a predetermined speed of thinning the transferred block. The thinning time is selected to perform thinning process on the stop layer. The transferred block for thinning is made of silicon, and the material of greater resistance or hardness of the stop layer is made of a hard metal such as gold, chromium, nickel, copper or an alloy. The stop layer comprises a layer on an upper surface made of diamond, silicon carbide or alumina. |
