NON-VOLATILE MEMORY DEVICE AND METHOD FOR ERASING DATA OF THE SAME

摘要

PURPOSE: A non-volatile memory device and a data erasure method thereof are provided to reduce the stress of a memory device by appropriately controlling the final level of an erase voltage. CONSTITUTION: A bulk voltage generating unit(330) generates a first level and a second level bulk voltage according to an input of an erase command. A page buffer unit(340) calculates the final level of an erase voltage according to the change of a threshold voltage value due to the first level and the second level bulk voltage. The bulk voltage generating unit generates the erase voltage according to the final level calculated by the page buffer unit. The bulk voltage generating unit generates the bulk voltage with a ISPE(Incremental Step Pulse Erase) mode. The final level erase voltage is maximum value of the bulk voltage generated with the ISPE mode.