发明名称 |
Method and apparatus for generating a plasma and semiconductor device fabrication method and apparatus |
摘要 |
A discharge plasma generating method includes (a) opposing a discharge electrode (303, 313, 323, 323a) having a substantially plane discharge portion to a substrate to be processed in a vacuum reaction vessel (2, 2C, 2J, 2K) such that said discharge electrode and said substrate are substantially parallel to each other;(b) evacuating the vacuum reaction vessel and supplying a process gas to a space between the discharge electrode and the substrate, and (c) applying HF power to the discharge electrode such that an envelope representing the spatial distribution of a HF voltage Æ on the discharge electrode in a split second changes in accordance with a function including time as a parameter, thereby generating a discharge plasma of the process gas between the discharge electrode and the substrate, with substantially no standing wave of the HF voltage Æ generated on the discharge electrode.
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申请公布号 |
EP2190004(A2) |
申请公布日期 |
2010.05.26 |
申请号 |
EP20100156072 |
申请日期 |
2001.01.11 |
申请人 |
MITSUBISHI HEAVY INDUSTRIES, LTD. |
发明人 |
YAMAKOSHI, HIDEO;SATAKE, KOJI;TAKEUCHI, YOSHIAKI;MASHIMA, HIROSHI;TATSUFUMI, AOI;MURATA, MASAYOSHI |
分类号 |
H01J37/32;H01L21/205 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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