发明名称 Method for manufacturing semiconductor device and method for designing photomask pattern
摘要 A method for designing a photomask pattern is provided. First, all line ends of object patterns are determined with reference to layout data. Then, object patterns, front edge portions, and joints, which are aligned on the same line extending along the Y-axis, are connected to form first reticle data. Reticle pattern data having data representing binding portions serving as light blocking portions is formed. The front edge portions being adjacent to each other and aligned in the X-axis are connected and adjacent joints being aligned in the same manner as the front edge portions are also connected to form second reticle data. Then, portions are provided at central regions between the binding portions so as to connect the adjacent binding portions including the front edge portions and the joints. Then, reticle data having data representing the binding portions serving as transparent patterns is formed.
申请公布号 US7723230(B2) 申请公布日期 2010.05.25
申请号 US20080212052 申请日期 2008.09.17
申请人 FUJITSU MICROELECTRONICS LIMITED 发明人 SETTA YUJI
分类号 H01L21/44;G03F1/68;G03F1/70;G03F7/20;H01L21/027 主分类号 H01L21/44
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