发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
摘要 PURPOSE: A semiconductor device and a method for forming the same are provided to prevent the short circuit between a contact and a conductive layer by forming a conductive layer regardless of the location of contact. CONSTITUTION: In a semiconductor device and a method for forming the same, a first interlayer insulating film(102), a conductive layer(104), and a second inter dielectric(106) are formed on the semiconductor substrate. A contact hole passes through the second inter dielectric layer, the conductive layer, and the first interlayer insulating film so that the semiconductor substrate is exposed. The insulating layer is formed in the side wall of the contact hole.
申请公布号 KR20100054459(A) 申请公布日期 2010.05.25
申请号 KR20080113402 申请日期 2008.11.14
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, WOO YOUNG
分类号 H01L21/28 主分类号 H01L21/28
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