| 摘要 |
A silica residue is generated, due to a presence of a step formed by a presence of the first layer metallic interconnect, and then, the residual silica is etched to form hollow portions when vias for the metallic interconnect provided in a layer above thereof is formed, and further, insulating materials remained above the hollow portions flakes off to create contaminants, leading to a reduction in the production yield. In the present invention, interconnects provided in a layer underlying a via group, which are provided for coupling to the upper layer interconnect layer, are disposed so as to cover vias composing its via group.
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