METHOD FOR PRODUCTING OF SOLAR CELL WITH ONE STEP SELECTIVE EMITTER AND WITH FORMED P+ ZONE.

摘要

The invention relates to Si solar cells with selective emitter and p+ zone for forming by one diffuse process in the other plate side. A semiconductor plate covered with dialectic layer (2) and in it set openable opening (3). The plate is covered with glass containing additives contrary to plate conduction and other side of the plate is coating with glass containing same additives as in plate. After holding plate in a high temperature, in one plate side at opening forms n+ zone (7), under dielectric -isos n zones and on the other plate side p+ zone. After etching layer (4), the opening which self coincides with zone (7) is opened. In open opening there is chemically precipitating Ni. After forming openings by laser ablation in glass (5) it is coating by metals and branding.