| 摘要 |
PURPOSE: A plasma enhanced chemical vapor deposition apparatus is provided to process a large substrate by selectively injecting a process gas to in a chamber. CONSTITUTION: In a plasma enhanced chemical vapor deposition apparatus, a processing gas supply device(130) supplies a process gas to a plasma generation part(110). A shower head(150) sprays a processing gas inside a processing chamber to move plasma which is generated in a processing gas supply unit and a plasma generation unit. A gas injection controller selectively controls a plurality of gas injection channels. The plurality of gas injection channels divides the shower head into a several region and supplies the process gas to the divided region.
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