发明名称 |
Growth method of GaN crystal, and GaN crystal substrate |
摘要 |
A method of producing a GaN crystal is directed to growing a GaN crystal on a GaN seed crystal substrate. The method includes the steps of preparing a GaN seed crystal substrate including a first dopant such that the thermal expansion coefficient of the GaN seed crystal substrate becomes greater than that of the GaN crystal, and growing the GaN crystal to a thickness of at least 1 mm on the GaN seed crystal substrate. Accordingly, there can be provided a method of producing a GaN crystal that can suppress generation of a crack and grow a thick GaN crystal, and a GaN crystal substrate.
|
申请公布号 |
US7723142(B2) |
申请公布日期 |
2010.05.25 |
申请号 |
US20080130082 |
申请日期 |
2008.05.30 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
MATSUMOTO NAOKI;SATO FUMITAKA;NAKAHATA SEIJI;OKAHISA TAKUJI;UEMATSU KOJI |
分类号 |
H01L21/00;H01L31/20 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|