Nonvolatile Memory Device and Read Methods Thereof

摘要

An object of the present inventive concept is providing a nonvolatile memory device having improved reliability by compensating a threshold voltage of a flash memory cell. A nonvolatile memory device according to the present inventive concept includes a memory cell array connected to a plurality of word lines; and a voltage generator for supplying a select read voltage to a select word line and an unselect read voltage to an unselect word line among the plurality of word lines when a read operation is performed. The voltage generator generates the unselect read voltage having a different level according to whether the unselect word line is adjacent to the select word line or not. A nonvolatile memory device according to the present inventive concept compensates a threshold voltage increased or decreased due to various causes. According to the present inventive concept, reliability of a nonvolatile memory device is improved.