COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING METHOD USING SAME

摘要

A composition which is decreased in molecular weight so as to achieve planarity capable of embedding unevenness of a substrate, and used for the purpose of forming a resist underlayer film that has a large dry etching selectivity and enables formation of a resist pattern having a desired shape. Specifically disclosed is a composition for forming a resist underlayer film, which is characterized by containing a compound obtained by substituting an end of a monomer with an alcohol compound (a solvent) and having a molecular weight not more than 2,000, namely a compound which is obtained by reacting a tri-epoxy compound, an optionally substituted acid anhydride and the alcohol compound and has a weight average molecular weight of 500-2,000.