| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase a saturated signal amount, while suppressing white scratch generation or dark current generation caused by crystal defects, in a CMOS solid-state image pickup device. Ž<P>SOLUTION: The solid-state image pickup device is formed with a first insulating film 40 on a semiconductor substrate 33 surface, a diffusion layer 43 and a second insulating film 44 on the diffusion layer and includes an element isolation means 86 for isolation neighboring pixels. The second insulating film 44 is formed in a position as deep as, or shallower than a p-n junction, in an accumulation layer 39 side of a photoelectric conversion part PD constituting a pixel, and is formed over the first insulating film 40. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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