LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A light emitting diode and a method for manufacturing the same are provided to improve the electrical property of the light emitting diode by doping phosphorus to p-type zinc oxide material. CONSTITUTION: A first clad layer(12) is formed on a substrate(10). An active layer(14) is formed on the first clad layer. Phosphorus which is formed in the active layer is doped in a zinc oxide-based second clad layer(16). A first electrode(17) is connected to the first clad layer. A second electrode(18) is connected to the second clad layer. The active layer is a quantum-dot structure or a multiple-quantum-well structure.