| 摘要 |
Disclosed is a method for manufacturing a semiconductor device which is decreased in resistance of a copper wiring containing a ruthenium-containing film and a copper-containing film, thereby having improved reliability. Also disclosed is an apparatus for manufacturing a semiconductor device. Specifically, an Ru film is formed on a substrate having a recessed portion by a CVD method using a raw material containing an organic ruthenium complex represented by the general formula (1) and a reducing gas (step S12).Then, a Cu film is formed on the Ru film by a CVD method using a raw material containing an organic copper complex represented by the general formula (2) and a reducing gas, thereby forming a copper wiring containing the Ru film and the Cu film in the recessed portion (step S14).
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