发明名称 POLYSILAZANE AND SYNTHETIC METHOD THEREOF, COMPOSITION FOR SEMICONDUCTOR ELEMENT PRODUCTION AND PRODUCTION METHOD OF SEMICONDUCTOR ELEMENT USING THE COMPOSITION FOR SEMICONDUCTOR ELEMENT PRODUCTION
摘要 <P>PROBLEM TO BE SOLVED: To provide polysilazane excellent in filling power of grooves while having high molecular weight, to provide a synthetic method thereof, to provide a polysilazane-containing composition for semiconductor element production, and to provide a production method of semiconductor elements and using the composition for semiconductor element production. Ž<P>SOLUTION: The polysilazane can be synthesized by reacting dichlorosilane, trichlorosilane and ammonia added in a reaction solvent as reactants in the presence of a catalyst, has 2,000-30,000 weight average molecular weight in terms of polystyrene, and is represented by chemical formula (1). Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010111842(A) 申请公布日期 2010.05.20
申请号 JP20090034674 申请日期 2009.02.18
申请人 KOREA KUMHO PETROCHEM CO LTD 发明人 PARK JOO HYEON;CHANG YONG
分类号 C08G77/62;C08L83/16;H01L21/312;H01L21/316;H01L21/76 主分类号 C08G77/62
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