摘要 |
The invention can be used for producing different luminescent materials and as a basis for producing subminiature light-emitting diodes, white light sources, single-electron transistors, nonlinear optical devices and photosensitive and photovoltaic devices. The inventive method for producing semiconductor quantum dots involves synthesising nanocrystal nuclei from a chalcogen-containing precursor and a precursor containing a group II or IV metal using an organic solvent and a surface modifier. The method is characterised in that (aminoalkyl)trialkoxisilanes are used as the organic solvent, nuclear fusion is carried out at a permanent temperature ranging from 150 to 250°C for 15 seconds to 1 hour and in that the reaction mixture containing the nanocrystal nuclei is additionally treated by UV-light for 1-10 minutes and by ultrasound for 5-15 minutes. The invention makes it possible to increase the photostability of the semiconductor quantum dots up to 34% and the capacity thereof to be dispersed in both, non-polar and polar solvents, so that the quantum yields are preserved and increased. |
申请人 |
FEDERALNOE GOSUDARSTVENNOE UNITARNOE PREDPRIATIE "NAUCHNO-ISSLEDOVATELSKIY INSTITUT PRIKLADNOI AKUSTIKI";NOVICHKOV, ROMAN VLADIMIROVICH;WAKSTEIN, MAXIM SERGEEVICH;NODOVA, EKATERINA LEONIDOVNA;MANIASHIN, ALEKSEY OLEGOVICH;TARASKINA, IRINA IVANOVNA |
发明人 |
NOVICHKOV, ROMAN VLADIMIROVICH;WAKSTEIN, MAXIM SERGEEVICH;NODOVA, EKATERINA LEONIDOVNA;MANIASHIN, ALEKSEY OLEGOVICH;TARASKINA, IRINA IVANOVNA |