发明名称 PATTERN CHECK DEVICE AND PATTERN CHECK METHOD
摘要 <p>Provided is a pattern check device including: a charge formation means which forms charge on a surface of a substrate (7) by generating an electron beam from a second electron source (20) which is different from an electron source (1) which generates an electron beam before applying an electron beam (3); a current measuring means (34) which measures a value of current flowing in the substrate while the charge is formed on the surface of the substrate by the charge formation means; and an adjustment means (37) which adjusts the charge formed by the charge formation means so that the value of the current measured by the current measuring means is a predetermined target value.  Provided is also a pattern check method which uses the pattern check device. Thus, it is possible to easily set an optimal condition of precharge executed before check of a pattern formed by a semiconductor device manufacturing process and automatically check whether the precharge is good.  Then, the check result is fed back to the operation afterward.  This prevents lowering of the reliability of the check result and always enables a stable check.</p>
申请公布号 WO2010055610(A1) 申请公布日期 2010.05.20
申请号 WO2009JP05372 申请日期 2009.10.15
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION;NOZOE, MARI;MIYAI, HIROSHI;OKAMURA, MITSURU;SUZUKI, MAKOTO;OMINAMI, YUSUKE 发明人 NOZOE, MARI;MIYAI, HIROSHI;OKAMURA, MITSURU;SUZUKI, MAKOTO;OMINAMI, YUSUKE
分类号 H01L21/66;G01N23/225;H01J37/20;H01J37/28 主分类号 H01L21/66
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