| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting diode wherein the light extraction efficiency is high and an increase in operating voltage is suppressed and an adhesiveness between a reflection layer which constitutes a reflection surface and a nitride semiconductor layer is high. <P>SOLUTION: The nitride semiconductor light-emitting diode includes: a p-type layer 103 composed of a p-type nitride semiconductor; a light emission layer 102 formed on the bottom face of the p-type layer 103; an n-type layer 101 formed on the bottom face of the light emission layer 102 and composed of an n-type nitride semiconductor; and a junction layer 114 so provided as to be in contact with the n-type layer 101. Irregularities with multiple slants are formed on the surface in contact with the junction layer 114 of the n-type layer 101. The junction layer 114 is composed of a metal consisting of group III atoms or an alloy containing group III atoms. <P>COPYRIGHT: (C)2010,JPO&INPIT |
