| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ring-shaped member suppressing consumption by plasma and deterioration in the productivity. <P>SOLUTION: A focus ring 24 is housed in a reaction chamber where the plasma is generated inside, in a substrate processing device which applies plasma-etching processing on a wafer. The focus ring includes four arc-like members 24a-24d of single-crystal silicon, arranged in a circumferential direction. Crystal planes of the single-crystal silicon which tends to wear, for example, crystal planes with Miller index of ä100} do not appear on top surfaces 24a<SB>1</SB>-24d<SB>1</SB>and external side surface 24a<SB>2</SB>-24d<SB>2</SB>of each of the arc-like members 24a-24d. <P>COPYRIGHT: (C)2010,JPO&INPIT |
