| 摘要 |
PURPOSE: An image sensor and a method for manufacturing the same are provided to improve photosensitivity by reducing distance between a photodiode and a micro-lens in order to reduce the length of an optical path. CONSTITUTION: A first metal line(101) is formed on a substrate. A bonding-silicon includes a plurality of dopant regions. An interlayer insulation layer is formed on the bonding-silicon. A first contact plug(130) is electrically connected to the first metal line. A second contact plug(170) is connected to the surface of the bonding-silicon. A second metal line(180) is connected to the second contact plug. A color filter layer and a micro-lens are formed on the second metal line.
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