| 摘要 |
<P>PROBLEM TO BE SOLVED: To highly accurately measure and detect an alignment shift amount of the positions between in-phase shots on a semiconductor wafer. <P>SOLUTION: The semiconductor device has an evaluating element 5ab for inspection which is formed by double exposure by second exposure on a peripheral edge of at least one chip region 1 patterned by first exposure in a wafer-like semiconductor substrate, and electrically measures the alignment shift amount in horizontal and vertical directions in the first and second exposures. The evaluating element 5ab for inspection is formed of a first wiring pattern 5a formed by the first exposure and a second wiring pattern 5b formed by the second exposure. <P>COPYRIGHT: (C)2010,JPO&INPIT |
