METHOD FOR MANUFACTURING AN IMAGE SENSOR

摘要

PURPOSE: A method for manufacturing an image sensor is provided to improve the amount of light which is received on a photo diode by adjusting the upper side of metal lines on the contact hole of the photo diode. CONSTITUTION: A circuit including an interlayer insulation layer(160) and a metal line is formed on a semiconductor substrate. A photo diode which includes a first doping layer(210) and a second doping layer(220) is formed on the interlayer insulation layer. A via-hole(240) which exposes a part of the metal line is formed by passing through the photo diode. A barrier pattern(260) is formed in the via-hole. A contact plug(270) is formed in the via-hole. A part of upper side of the contact plug is etched. An insulation layer is formed on the upper side of the contact plug.