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发明名称
Vorrichtung und Verfahren zur Herstellung eines rauscharmen Sperrschicht-Feldeffekttransistors
摘要
申请公布号
DE112007001951(T5)
申请公布日期
2009.07.30
申请号
DE200711001951T
申请日期
2007.09.13
申请人
INTEL CORPORATION
发明人
SCHMIDT, DOMINIK
分类号
H01L21/335;H01L29/78
主分类号
H01L21/335
代理机构
代理人
主权项
地址
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