MOS TRANSISTORS FOR THIN SOI INTEGRATION AND METHODS FOR FABRICATING THE SAME

摘要

MOS transistors (100) for thin SOI integration and methods for fabricating such MOS transistors are provided. One exemplary method includes the steps of providing a silicon layer (106) overlying a buried insulating layer (104) and epitaxially growing a silicon-comprising material layer (108) overlying the silicon layer. A trench (112) is etched within the silicon-comprising material layer and exposing the silicon layer. An MOS transistor gate stack (148) is formed within the trench. The MOS transistor gate stack comprises a gate insulator (138) and a gate electrode (140). Ions of a conductivity-determining type (142) are implanted within the silicon-comprising material layer using the gate stack as an implantation mask.