发明名称 |
NONVOLATILE SEMI-CONDUCTOR MEMORY DEVICE AND METHOD FOR CALCULATING READ VOLTAGE NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE: A nonvolatile semiconductor memory device, a memory card thereof, a memory system thereof, and a read voltage estimation method thereof are provided to prevent data error due to the change of read voltage by estimating optimum read voltage through comparing data information during a program process and a read process. CONSTITUTION: A memory cell array(110) comprises a plurality of memory cells. A read voltage estimating unit(20) compares data information during a program process and a read process. The read voltage estimating unit estimates optimum read voltage by changing the read voltage based on the comparison result. A read voltage generating unit(10) generates a corresponding read voltage in response to a control signal of the read voltage estimating unit. A reference data storage unit stores the reference data drawn from program data.
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申请公布号 |
KR20100052159(A) |
申请公布日期 |
2010.05.19 |
申请号 |
KR20080111056 |
申请日期 |
2008.11.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SONG, SEUNG HWAN;KIM, JAE HONG;CHO, KYOUNG LAE;KIM, YONG JUNE;KONG, JUN JIN;KIM, JONG HAN |
分类号 |
G11C16/26;G11C16/30;G11C16/32 |
主分类号 |
G11C16/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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