| 摘要 |
A nonvolatile memory cell is disclosed, having first (2) and second (3) semiconductor islands at the same horizontal level and spaced a predetermined distance apart, the first semiconductor island (2) providing a control gate and the second semiconductor island (3) providing source and drain terminals; a gate dielectric layer (4) on at least part of the first semiconductor island (2); a tunneling dielectric layer (5) on at least part of the second semiconductor island (3); a floating gate (7) on at least part of the gate dielectric layer (4) and the tunneling dielectric layer (5); and a metal layer in electrical contact with the control gate and the source and drain terminals. In one advantageous embodiment, the nonvolatile memory cell may be manufactured using an "all-printed" process technology. |
