发明名称 Method for forming photoresist layer
摘要 A method for forming a photoresist layer is provided. The method includes following steps. A wafer is provided in a semiconductor machine. The wafer is spun at a first spin speed. A pre-wet solvent is dispensed on the spinning wafer by using a nozzle disposed at a fixed position. The pre-wet solvent then stops dispensing. The spin speed of the wafer is adjusted from the first spin speed to a second spin speed which is faster than the first spin speed. Thereafter, a photoresist layer is coated on the wafer.
申请公布号 US7718551(B2) 申请公布日期 2010.05.18
申请号 US20080044621 申请日期 2008.03.07
申请人 UNITED MICROELECTRONICS CORP. 发明人 LIU YU-HUAN;CHEN CHIH-JUNG;HUANG CHIH-CHUNG
分类号 H01L21/00;B05D3/12;C08J7/04;H01L21/8242 主分类号 H01L21/00
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