| 摘要 |
This invention discloses a write-sensing circuit for a semiconductor memory having at least one memory block with a continuous word-line being coupled to all the memory cells in a column of the memory block and a continuous bit-line being coupled to all the memory cells in a row of the memory block, the write-sensing circuit comprising a first and a second sense amplifier belonging to the same memory block, a first switching device coupled between the first sense amplifier and a first power supply, the first switching device being controlled by a first signal, and a second switching device coupled between the second sense amplifier and the first power supply, the second switching device being controlled by a second signal different from the first signal, wherein when the first sense amplifier is activated, the second sense amplifier can remain de-activated.
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