发明名称 |
Semiconductor structure and method of manufacture |
摘要 |
A structure comprises a deep subcollector buried in a first region of a dual epitaxial layer and a reachthrough structure in contact with the deep subcollector to provide a low-resistive shunt which prevents CMOS latch-up for a first device. The structure may additionally include a near subcollector formed in a higher region than the deep subcollector and under another device. At least one reachthrough electrically connects the deep subcollector and the near subcollector. The method includes forming a merged triple well double epitaxy/double subcollector.
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申请公布号 |
US7718481(B2) |
申请公布日期 |
2010.05.18 |
申请号 |
US20060279934 |
申请日期 |
2006.04.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LIU XUEFENG;RASSEL ROBERT M.;VOLDMAN STEVEN H. |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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