Thin polycrystalline diamond layer fabricating method for use during fabricating semiconductor on diamond structure in electronics field, involves removing substrate, and polishing and thinning down diamond layer to obtain polished face

摘要

The method involves forming a diamond layer (32) having thickness greater than 500 nm, a free face with roughness and another face on a side of a silicon-on-insulator substrate, on the substrate. The first face is polished. The layer is thinned down to thickness equal to a surface roughness for obtaining a polished face. The polished face is bonded with another substrate i.e. transfer substrate, by molecular bonding. The former substrate is removed. The layer is polished and thinned down for obtaining another polished face (32'), and is assembled with layers made of semiconductor material. An independent claim is also included for a method for fabricating a semiconductor on a diamond structure.