GROUP-III NITRIDE MONOCRYSTAL WITH IMPROVED CRYSTAL QUALITY GROWN ON AN ETCHED-BACK SEED CRYSTAL AND METHOD OF PRODUCING THE SAME

摘要

The present invention provides a method for growing group Ill-nitride crystals wherein the group Ill-nitride crystal growth occurs on an etched seed crystal. The etched seed is fabricated prior to growth using a temperature profile which produces a high solubility of the group Ill-nitride material in a seed crystals zone as compared to a source materials zone. The measured X-ray diffraction of the obtained crystals have significantly narrower Full Width at Half Maximum values as compared to crystals grown without etch back of the seed crystal surfaces prior to growth.