METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,申请号KR20080110120-传众专利搜索

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发明名称	METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要	<p>PURPOSE: A method of manufacturing a semiconductor device is provided to prevent the electrical short between patterns by preventing bend and falling of the pattern. CONSTITUTION: An etching object film is formed on a semiconductor substrate(100). A first patter is formed by etching an object film. The first mask pattern is removed. The first insulating layer(112) is buried between first patterns. A second pattern is formed by etching the first pattern. The second mask pattern is removed. The second insulating layer(116) is buried between second patterns.</p>
申请公布号	KR20100050974(A)	申请公布日期	2010.05.14
申请号	KR20080110120	申请日期	2008.11.06
申请人	HYNIX SEMICONDUCTOR INC.	发明人	KIM, JAE KI
分类号	H01L21/027	主分类号	H01L21/027
代理机构		代理人
主权项
地址

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