METHOD OF PREPARING DETECTORS FOR OXIDE BONDING TO READOUT INTEGRATED CHIPS

摘要

In one embodiment, a method of preparing detectors (220) for oxide bonding to an integrated chip (900), e.g., a readout integrated chip, includes providing a wafer having a plurality of detector elements with bumps (230) thereon. A floating oxide layer (810) is formed surrounding each of the bumps (230) at a top portion thereof. An oxide-to-oxide bond is formed between the floating oxide layer (810) and an oxide layer (910) of the integrated chip which is provided in between corresponding bumps (930) of the integrated chip. The oxide-to-oxide bond enables the bumps on the detector elements and the bumps on the integrated chip to be intimately contacted with each other, and removes essentially all mechanical stresses on and between the bumps. In another embodiment, a device has an interconnect interface that includes the oxide-to-oxide bond and an electrical connection between the bumps on the detector elements and the bumps on the integrated chip.