| 摘要 |
PURPOSE: A method of manufacturing a semiconductor device are provided to allow the edge of a contact plug of a pad region to be higher than the center of the contact plug by forming the contact plug which has higher density of a pattern in the pad region than a fuse region. CONSTITUTION: An insulating layer(120) is formed on a semiconductor substrate(100). The semiconductor substrate has a fuse region(F) and a pad region(P). A plurality of first contact holes are formed on the fuse region. A plurality of second contact holes are formed in the pad region. The second contact hole has a center higher than an edge. A plurality of first contact plugs(130a) are formed within the first contact hole. A plurality of second contact plugs(130b) are formed within the second contact hole. The conductive film(170) is formed on the first and second contact plug and the insulating layer. The fuse and conductive pattern are formed by etching the conductive.
|
