发明名称 APPARATUS FOR PROCESSING SUBSTRATE
摘要 PURPOSE: An apparatus for processing a substrate is provided to improve the delay of the temperature rise of an exhaust hole and a gate by comprising an auxiliary heating part on at least one adjacent position to the gate or the exhaust hole. CONSTITUTION: A reaction space is formed inside a chamber(10). A gate(11) and an exhaust hole(15) are formed inside the chamber. The gate is used for leading the substrate in or out. A auxiliary heating part(100,200) is formed on an adjacent position to the gate or exhaust hole. The auxiliary heating part increases the temperature in the chamber.
申请公布号 KR20100050659(A) 申请公布日期 2010.05.14
申请号 KR20080109655 申请日期 2008.11.06
申请人 TES CO., LTD. 发明人 YANG, SUNG CHUL;KIM, JIN SUNG;ROH, HEE SUNG
分类号 H01L21/02;H01L21/3065 主分类号 H01L21/02
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