发明名称 |
APPARATUS FOR PROCESSING SUBSTRATE |
摘要 |
PURPOSE: An apparatus for processing a substrate is provided to improve the delay of the temperature rise of an exhaust hole and a gate by comprising an auxiliary heating part on at least one adjacent position to the gate or the exhaust hole. CONSTITUTION: A reaction space is formed inside a chamber(10). A gate(11) and an exhaust hole(15) are formed inside the chamber. The gate is used for leading the substrate in or out. A auxiliary heating part(100,200) is formed on an adjacent position to the gate or exhaust hole. The auxiliary heating part increases the temperature in the chamber.
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申请公布号 |
KR20100050659(A) |
申请公布日期 |
2010.05.14 |
申请号 |
KR20080109655 |
申请日期 |
2008.11.06 |
申请人 |
TES CO., LTD. |
发明人 |
YANG, SUNG CHUL;KIM, JIN SUNG;ROH, HEE SUNG |
分类号 |
H01L21/02;H01L21/3065 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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