METHODS OF MAKING CAPACITORS, DRAM ARRAYS AND ELECTRONIC SYSTEMS

摘要

Some embodiments include methods of making stud-type capacitors utilizing carbon-containing support material. Openings may be formed through the carbon- containing support material to electrical nodes, and subsequently conductive material may be grown within the openings. The carbon-containing support material may then be removed, and the conductive material utilized as stud-type storage nodes of stud- type capacitors. The stud-type capacitors may be incorporated into DRAM, and the DRAM may be utilized in electronic systems.